? 2002 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c75a i c90 t c = 90 c50a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 100 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque to-247ad 1.13/10 nm/lb.in. to-264 0.9/6 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247 6 g to-264 10 g to-268 4 g 95585f(12/02) v ces = 600 v i c25 = 75 a v ce(sat) = 2.3 v t fi(typ) = 120 ns ixgh 50n60b ixgk 50n60b ixgt 50n60b ixgj 50n60b symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.3 v features ? international standard packages ? high frequency igbt ? latest generation hdmos tm process ? high current handling capability ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies advantages ? easy to mount with 1 screw (insulated mounting screw hole) ? switching speed for high frequency applications ? high power density hiperfast tm igbt to-247 ad (ixgh) c e c (tab) to-268 (d3) ( ixgt) c (tab) g e g = gate d = drain e = emitter tab = collector to-264 aa (ixgk) e g c c (tab) (tab) g c e to-268 leaded (ixgj)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 25 42 s pulse test, t 300 s, duty cycle 2 % c ies 4100 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 310 pf c res 95 pf q g 160 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 30 nc q gc 55 nc t d(on) 50 ns t ri 50 ns t d(off) 150 250 ns t fi 120 250 ns e off 3.0 4.5 mj t d(on) 50 ns t ri 50 ns e on 3mj t d(off) 200 ns t fi 250 ns e off 4.2 mj r thjc 0.42 k/w r thck to-247 & to-268 leaded packages 0.25 k/w to-264 package 0.15 k/w dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 -gate 2 -collector 3 -emitter tab-collector 1 2 3 to-247 ad (ixgh) outline ixgh 50n60b ixgk 50n60b ixgj 50n60b ixgt 50n60b inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 ? v ces , r g = r off = 2.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 ? v ces , r g = r off = 2.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g to-264 aa (ixgk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-268 (ixgj) leaded outline to-268 (ixgt) outline terminals: 1 - gate 2 - collector
? 2002 ixys all rights reserved figure 1. saturation voltage characteristics figure 2. extended output characteristics figure 3. saturation voltage characteristics figure 4. temperature dependence of v ce(sat) figure 5. admittance curves figure 6. capacitance curves v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 v ge - volts 0246810 i c - amperes 0 20 40 60 80 100 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 9v 5v v ce = 10v t j = 25c t j = 25c i c = 25a i c = 50a i c = 100a t j = 125c f = 1mhz 7v v ge = 15v t j = 25c v ce - volts 012345 i c - amperes 0 20 40 60 80 100 t j = 125c c iss c oss 7v 5v v ge = 15v 13v 11v 9v 9v v ge = 15v 13v 11v v ge = 15v 13v 7v 11v c rss 5v ixgh 50n60b ixgk 50n60b ixgj 50n60b ixgt 50n60b
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixgh 50n60b ixgk 50n60b ixgj 50n60b ixgt 50n60b r g - ohms 0 102030405060 e (off) - millijoules 0 2 4 6 8 10 12 e (on) - millijoules 0 1 2 3 4 5 6 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 d=0.02 v ce - volts 0 100 200 300 400 500 600 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 40 80 120 160 200 v ge - volts 0 4 8 12 16 i c - amperes 0 20406080100 e (off) - millijoules 0 2 4 6 8 10 12 e (on) - millijoules 0 1 2 3 4 5 6 v ce = 250v i c = 25a e (on) e (off) e (on) e (off) t j = 125c r g = 6.2 ? dv/dt < 5v/ns d=0.1 d=0.05 single pulse d = duty cycle t j = 125c 600 e (off) d=0.2 d=0.5 d=0.01 r g = 4.7 ? i c =25a t j = 125c i c = 100a i c = 50a e (on) e (on) e (off) figure 7. dependence of e on and e off on i c figure 8. dependence of e on and e off on r g figure 9. gate charge figure 10. turn-off safe operating area figure 11. igbt transient thermal resistance
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